A PN junction, which is the fundamental building block of semiconductor devices, exhibits a capacitance effect known as barrier capacitance. This capacitance varies depending on the bias condition applied to the junction. When a forward bias is applied, the depletion region (barrier region) narrows, resulting in an increase in the barrier capacitance. Conversely, under reverse bias, the depletion region widens, leading to a decrease in the capacitance value. The GSZ-CV-2000 Capacitor Voltage Characteristic Tester is an advanced digital instrument operating at a frequency of 1 MHz. It is specifically designed to measure the barrier capacitance of PN junctions in semiconductor devices under various bias voltages. In addition to testing PN junctions, this device can also be used for testing other types of capacitors. Its intelligent design allows for precise and reliable measurements, making it a valuable tool for both research and industrial applications. The user-friendly interface and high accuracy make it suitable for engineers and technicians working in the field of semiconductor characterization and electronic component testing.
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